Vapor deposition mask with metal plate

ABSTRACT

A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/506,107, filed Jul. 9, 2019, which is a continuation of U.S.application Ser. No. 16/184,288, filed Nov. 8, 2018, now U.S. Pat. No.10,391,511, issued Aug. 27, 2019, which is a continuation of U.S.application Ser. No. 16/015,430, filed Jun. 22, 2018, now U.S. Pat. No.10,189,042, issued Jan. 29, 2019, which is a continuation of U.S.application Ser. No. 15/214,808, filed Jul. 20, 2016, now U.S. Pat. No.10,160,000, issued Dec. 25, 2018, which is a continuation of U.S.application Ser. No. 14/719,355, filed May 22, 2015, now U.S. Pat. No.9,527,098, issued Dec. 27, 2016, which is a division of U.S. applicationSer. No. 14/371,670, filed Jul. 10, 2014, now U.S. Pat. No. 9,108,216,issued Aug. 18, 2015, which in turn is the national stage entry ofInternational Application No. PCT/JP2013/050422, filed Jan. 11, 2013,which designated the United States, the entireties of which areincorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to a vapor deposition mask, a method forproducing a vapor deposition mask device and a method for producing anorganic semiconductor element.

BACKGROUND OF THE INVENTION

Conventionally, in production of an organic EL element, a vapordeposition mask that is composed of a metal formed by a number ofmicroscopic slits being arranged in parallel with one another atmicroscopic spaces in a region that should be subjected to vapordeposition, for example, has been used in formation of an organic layerof an organic EL element or a cathode electrode. While in the case ofusing the vapor deposition mask, the vapor deposition mask is placed ona substrate front surface that should be subjected to vapor depositionand is held by using a magnet from a back surface, the rigidity of theslits is extremely small, and therefore, distortion easily occurs to theslits when the vapor deposition mask is held on the substrate frontsurface, which becomes an obstacle to enhancement in definition orupsizing of the products in which the slit lengths are large.

Various studies have been made on the vapor deposition masks forpreventing distortion of slits, and, for example, Patent Literature 1proposes a vapor deposition mask including a base plate that also servesa first metal mask including a plurality of openings, a second metalmask including a number of microscopic slits in regions to cover theaforementioned openings, and a mask pulling and holding device thatpositions the second metal mask on the base plate in a state in whichthe second metal mask is pulled in the longitudinal direction of theslits. Namely, the vapor deposition mask with two kinds of metal masksbeing combined is proposed. It is indicated that according to the vapordeposition mask, slit precision can be ensured without occurrence ofdistortion to the slits.

Incidentally, in recent years, with upsizing of the products usingorganic EL elements or increase in substrate sizes, a demand forupsizing are also growing with respect to vapor deposition masks, andthe metal plates for use in production of the vapor deposition maskscomposed of metals are also upsized. However, with the present metalprocessing technique, it is difficult to form slits in a large metalplate with high precision, and even if distortion in slit portions canbe prevented by the method proposed in the above described PatentLiterature 1 or the like, the method or the like cannot respond toenhancement in definition of the slits. Further, in the case of use of avapor deposition mask composed of only a metal, the mass thereof alsoincreases with upsizing, and the total mass including a frame alsoincreases, which becomes a hindrance to handling.

CITATION LIST Patent Literature

-   Patent Literature 1: Japanese Patent Laid-Open No. 2003-332057

SUMMARY OF THE INVENTION

The present invention is made in the light of the situation as above,and addresses the main problems of providing a vapor deposition maskcapable of satisfying both enhancement in definition and reduction inweight even when a size is increased, providing a method for producing avapor deposition mask device capable of aligning the vapor depositionmask with a frame with high precision, and further providing a methodfor producing an organic semiconductor element capable of producing anorganic semiconductor element with high precision.

The present invention for solving the above described problem is a vapordeposition mask, wherein a metal mask provided with a slit, and a resinmask that is positioned on a front surface of the metal mask, and hasopenings corresponding to a pattern to be produced by vapor depositionarranged by lengthwise and crosswise in a plurality of rows, arestacked.

Further, the aforementioned metal mask may be of a magnetic substance.Further, a sectional shape of the opening may have broadening toward avapor deposition source direction. A sectional shape of the slit mayhave broadening toward the vapor deposition source direction. Further, asectional shape of an entire opening formed by the slit of the metalmask and the opening of the resin mask presents a step shape.

Further, a barrier layer may be provided on end surfaces that form theopening of the resin mask. Further, a thickness of the resin mask may be3 μm to 25 μm inclusive.

The present invention for solving the above described problems is amethod for producing a vapor deposition mask device, and includes thesteps of bonding a metal mask provided with a slit and a resin plate toeach other, fixing the metal mask to which the resin plate is bonded,onto a frame containing a metal, and forming openings corresponding to apattern to be produced by vapor deposition in a plurality of rowslengthwise and crosswise in the resin plate by emitting laser from themetal mask side.

Further, the present invention for solving the above described problemsis a method for producing a vapor deposition mask device, and includesthe steps of fixing a metal mask provided with a slit onto a framecontaining a metal, bonding the metal mask fixed to the frame and aresin plate to each other, and forming openings corresponding to apattern to be produced by vapor deposition in a plurality of rowslengthwise and crosswise in the resin plate by emitting laser from themetal mask side.

Further, the present invention for solving the above described problemis a method for producing an organic semiconductor element, wherein thevapor deposition mask having the above described features is used.

According to the vapor deposition mask of the present invention, evenwhen the size is increased, both enhancement in definition and reductionin weight can be satisfied. Further, according to the method forproducing a vapor deposition mask device of the present invention, theabove described vapor deposition mask can be aligned to the frame withhigh precision, in addition to the effect of the above described vapordeposition mask. Further, according to the method for producing anorganic semiconductor element of the present invention, an organicsemiconductor element can be produced with high precision.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 (a)-(b) are schematic perspective views that show a metal maskand a resin mask of a vapor deposition mask showing one example of thepresent invention by exploding the vapor deposition mask, FIG. 1 (a) isa schematic perspective view of a metal mask, and FIG. 1 (b) is aschematic perspective view of a resin mask.

FIGS. 2 (a), (c) and (d) are front views of the vapor deposition maskshowing one example of the present invention, seen from a metal maskside, and FIG. 2 (b) is a schematic sectional view showing the vapordeposition mask showing one example of the present invention.

FIG. 3 is an enlarged sectional view of the vapor deposition mask 100 ofthe present invention.

FIG. 4 (a) is a perspective view of another mode of the resin mask, andFIG. 4 (b) is a sectional view thereof.

FIG. 5 is a front view showing another mode of the vapor deposition mask100 of the present invention.

FIG. 6 is a process chart for describing a first production method. Notethat (a) to (f) are all sectional views.

FIG. 7 is a process chart for describing a second production method.Note that (a) to (f) are all sectional views.

FIGS. 8 (a)-(c) are schematic sectional views showing a relation of ashadow and a thickness of the metal mask.

FIGS. 9 (a)-(d) are partial schematic sectional views showing a relationof a slit of the metal mask, and an opening of a resin mask.

FIG. 10 is a partial schematic sectional view showing a relation of theslit of the metal mask and the opening of the resin mask.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, the vapor deposition mask 100 of the present invention willbe described specifically with use of the drawings.

FIG. 1 (a) is a schematic perspective view of a metal mask configuring avapor deposition mask showing one example of the present invention, andFIG. 1 (b) is a schematic perspective view of a resin mask configuringthe vapor deposition mask showing one example of the present invention.FIG. 2 (a) is a front view of the vapor deposition mask showing oneexample of the present invention, seen from a metal mask side, and FIG.2 (b) is a schematic sectional view showing the vapor deposition maskshowing one example of the present invention. FIG. 3 is an enlargedsectional view of the vapor deposition mask 100 of the presentinvention. Note that in each of FIGS. 1 to 3, in order to emphasizeslits provided in the metal mask and openings provided in the vapordeposition mask, the ratios thereof to the whole body are illustrated tobe large.

In the vapor deposition mask 100 of the present invention, theconfiguration is adopted, in which a metal mask 10 provided with slits15, and a resin mask 20 which is positioned on one surface of the metalmask 10 (an undersurface of the metal mask 10 in a case shown in FIG. 2(b)), and has openings 25 corresponding to a pattern to be produced byvapor deposition arranged by lengthwise and crosswise in a plurality ofrows, are stacked, as shown in FIGS. 1 and 2.

Here, when a mass of the vapor deposition mask 100 of the presentinvention, and a mass of the vapor deposition mask that is composed ofonly a metal and is conventionally known are compared on the assumptionthat thicknesses of the entire vapor deposition masks are the same, themass of the vapor deposition mask 100 of the present invention islighter by an amount of a part of the metal material of theconventionally known vapor deposition mask, which is replaced with aresin material. Further, in order to reduce weight by using the vapordeposition mask composed of only a metal, it is necessary to reduce thethickness of the vapor deposition mask, but when the thickness of thevapor deposition mask is reduced, distortion sometimes occurs to thevapor deposition mask, and reduction in durability sometimes occurs whenupsizing the vapor deposition mask. Meanwhile, according to the vapordeposition mask according to the present invention, even when thethickness of the entire vapor deposition mask is increased to satisfydistortion and durability at the time of the mask being upsized,reduction in weight can be achieved more than the vapor deposition maskthat is formed of only a metal by the presence of the resin mask 20.Hereinafter, respective members will be described specifically.

Resin Mask

The resin mask 20 is composed of a resin, and as shown in FIGS. 1 and 2,the openings 25 corresponding to a pattern to be produced by vapordeposition are arranged by lengthwise and crosswise in a plurality ofrows at the position overlapping the slit 15. Note that the pattern tobe produced by vapor deposition in the description of the presentapplication means the pattern to be produced by using the vapordeposition mask, and, for example, when the vapor deposition mask isused in formation of an organic layer of an organic EL element, thepattern is in a shape of the organic layer. Further, in the presentinvention, the example in which the openings are arranged by lengthwiseand crosswise in a plurality of rows is cited and described, but theopenings 25 can be provided at positions overlapping the slits, and whenthe slits 15 are arranged in only a single row in the lengthwisedirection, or the crosswise direction, the openings 25 can be providedat the position overlapping the slit 15 in the single row.

For the resin mask 20, a conventionally known resin material can beproperly selected and used, and while the material is not especiallylimited, a material that enables formation of the opening 25 with highdefinition by laser processing or the like, has a low rate ofdimensional change and a low rate of humidity absorption under heat andwith passage of time, and is lightweight, is preferably used. As suchmaterials, a polyimide resin, a polyamide resin, a polyamide-imideresin, a polyester resin, a polyethylene resin, a polyvinylalcoholresin, a polypropylene resin, a polycarbonate resin, a polystyreneresin, a polyacrylonitrile resin, an ethylene-vinyl acetate copolymerresin, an ethylene-vinyl alcohol copolymer resin, anethylene-methacrylic acid copolymer resin, a polyvinyl chloride resin, apolyvinylidene chloride resin, cellophane, an ionomer resin and the likecan be cited. Among the materials illustrated in the above, the resinmaterials with the thermal expansion coefficients of 16 ppm/° C. or lessare preferable, the resin materials with rates of humidity absorption of1.0% or less are preferable, and the resin materials including both theconditions are especially preferable. In the present invention, theresin mask 20 is composed of the resin material that enables formationof the openings 25 with high definition as compared with the metalmaterial as described above. Accordingly, the vapor deposition mask 100having the openings 25 with high definition can be provided.

While the thickness of the resin mask 20 is not especially limited, theresin mask 20 is preferably as thin as possible in order to preventoccurrence of an insufficient vapor deposition portion, namely, a vapordeposition portion with a film thickness smaller than the intended vapordeposition film thickness, a so-called shadow, in the pattern that isproduced by vapor deposition, when vapor deposition is performed withuse of the vapor deposition mask 100 of the present invention. However,when the thickness of the resin mask 20 is less than 3 μm, a defect suchas a pinhole easily occurs, and the risk of deformation or the likeincreases. Meanwhile, when the thickness of the resin mask 20 exceeds 25μm, generation of a shadow can arise. With this point taken intoconsideration, the thickness of the resin mask 20 is preferably from 3μm to 25μ inclusive. By setting the thickness of the resin mask 20within this range, the defect such as a pinhole and the risk ofdeformation or the like can be reduced, and generation of a shadow canbe effectively prevented. In particular, the thickness of the resin mask20 is set to be from 3 μm to 10 μm inclusive, more preferably, from 4 μmto 8 μm inclusive, whereby the influence of a shadow at the time offorming a high-definition pattern exceeding 300 ppi can be preventedmore effectively. Note that in the vapor deposition mask 100 of thepresent invention, the metal mask 10 and the resin mask 20 may bedirectly bonded, or may be bonded via an adhesive layer, and when themetal mask 10 and the resin mask 20 are bonded via the adhesive layer,the total thickness of the resin mask 20 and the adhesive layer ispreferably set to be within a range from 3 μm to 25 μm inclusive,preferably from 3 μm to 10 μm inclusive, and more preferably, from 4 μmto 8 μm inclusive.

The shape and the size of the opening 25 are not especially limited, andcan be the shape and the size corresponding to the pattern to beproduced by vapor deposition. Further, as shown in FIG. 2 (a), a pitchP1 in a crosswise direction of the adjacent openings 25, and a pitch P2in a lengthwise direction can be also properly set in accordance withthe pattern to be produced by vapor deposition.

The positions at which the openings 25 are provided and the number ofthe openings 25 are not specially limited, and a single opening 25 maybe provided at a position overlapping the slit 15, or a plurality ofopenings 25 may be provided in the lengthwise direction, or thecrosswise direction. For example, as shown in FIG. 2 (c), when the slitextends in the lengthwise direction, two or more of the openings 25 thatoverlap the slit 15 may be provided in the crosswise direction.

A sectional shape of the opening 25 is not specially limited, and endsurfaces that face each other of the resin mask forming the opening 25may be substantially parallel with each other, but the sectional shapeof the opening 25 is preferably is the shape having broadening toward avapor deposition source as shown in FIG. 2 (b) and FIG. 3. In otherwords, the sectional shape of the opening 25 preferably has a tapersurface having broadening toward the metal mask 10 side. By making thesectional shape of the opening 25 have the above configuration, a shadowcan be prevented from being generated in the pattern that is produced byvapor deposition when vapor deposition is performed with use of thevapor deposition mask of the present invention. While a taper angle θshown in FIG. 4 can be properly set with the thickness or the like ofthe resin mask 20 taken into consideration, an angle (θ) connecting alower bottom distal end in the opening of the resin mask and an upperbottom distal end in the opening of the same resin mask is preferablywithin a range from 25° to 65°. In particular, within this range, theangle (θ) is preferably an angle smaller than a vapor deposition angleof a vapor deposition machine to be used. Furthermore, in FIG. 2 (b) andFIG. 3, an end surface 25 a that forms the opening 25 shows a linearshape, but the end surface 25 a is not limited thereto, and may be in acurved shape protruding outward, namely, a shape of the entire opening25 may be in a bowl shape. The opening 25 that has the sectional shapelike this can be formed by performing multistage laser irradiation thatproperly adjusts the irradiation position of the laser and irradiationenergy of the laser at the time of formation of the opening 25, orchanges the irradiation position stepwise, for example.

Since a resin material is used for the resin mask 20, formation of theopening 25 is enabled without using the processing methods that are usedin the conventional metal processing, for example, the processingmethods such as etching processing method and cutting. Namely, themethod for forming the opening 25 is not specially limited, and theopening 25 can be formed by using various processing methods, forexample, a laser processing method capable of forming the opening 25with high definition, precision press processing, photolithographyprocessing and the like. The method for forming the opening 25 by alaser processing method or the like will be described later.

As the etching processing method, for example, a wet etching method suchas a spray etching method that sprays an etching agent at apredetermined spray pressure from an injection nozzle, an immersionetching method that immerses an object in an etching solution filledwith an etching agent, and a spin etching method that drops an etchingagent, and a dry etching method using gas, plasma and the like can beused.

Further, in the present invention, as the configuration of the vapordeposition mask 100, the resin mask 20 is used. Therefore, when vapordeposition is performed with use of the vapor deposition mask 100, veryhigh heat is applied to the openings 25 of the resin mask 20, and therisk of a gas being generated from end surfaces 25 a (see FIG. 3) thatform the opening 25 of the resin mask 20 to reduce the degree of vacuumin the vapor deposition apparatus or the like can arise. Accordingly,with this point taken into consideration, the end surfaces 25 a thatform the opening 25 of the resin mask 20 are preferably provided with abarrier layer 26. By forming the barrier layer 26, a gas can beprevented from being generated from the end surfaces 25 a that form theopening 25 of the resin mask 20.

As the barrier layer 26, a thin film layer or a vapor deposition layerof an inorganic oxide, an inorganic nitride or a metal can be used. Asan inorganic oxide, oxides of aluminum, silicon, indium, tin andmagnesium can be used, and as a metal, aluminum or the like can be used.A thickness of the barrier layer 26 is preferably around 0.05 μm to 1μm.

Furthermore, the barrier layer preferably covers a front surface at thevapor deposition source side, of the resin mask 20. The front surface atthe vapor deposition source side, of the resin mask 20 is covered withthe barrier layer 26, whereby a barrier property thereof is furtherenhanced. The barrier layer is preferably formed by various PVD methodsand CVD methods in the case of an inorganic oxide and an inorganicnitride. In the case of a metal, the barrier layer is preferably formedby a vacuum vapor deposition method. Note that the front surface at thevapor deposition source side, of the resin mask 20 mentioned here may bethe entire front surface at the vapor deposition source side, of theresin mask 20, or may be only portions exposed from the metal mask inthe front surface at the vapor deposition source side, of the resin mask20.

FIG. 4 (a) is a perspective view of another mode of the resin mask, and(b) is a sectional view thereof.

As shown in FIG. 4, on the resin mask 20, grooves 28 that extend in thelengthwise direction or the crosswise direction (the lengthwisedirection in the case of FIG. 4) of the resin mask 20 are preferablyformed. When heat is applied at the time of vapor deposition, the resinmask 20 is thermally expanded, whereby the dimensions and positions ofthe opening 25 are likely to change. However, by forming the grooves 28,expansion of the resin mask can be absorbed, and the dimensions and thepositions of the openings 25 can be prevented from changing as a resultthat the resin mask 20 expands in a predetermined direction as a wholeby cumulative thermal expansion occurring at respective sites of theresin mask.

Note that in FIG. 4, the grooves 28 that extend in the crosswisedirection are formed among the openings 25, but the groove 28 is notlimited thereto, and grooves that extend in the crosswise direction maybe formed among the openings 25. Furthermore, the positions are notlimited to those among the openings 25, and the grooves may be formed atpositions overlapping the openings 25. Furthermore, grooves may beformed in a mode of combination thereof.

A depth and a width of the groove 28 are not specially limited, but whenthe depth of the groove 28 is too deep, and the width is too large,rigidity of the resin mask 20 tends to be reduced, and therefore, thedepth and the width need to be set with consideration given to thispoint. Further, a sectional shape of the groove is not speciallylimited, and can be optionally selected to be a U-shape, a V-shape orthe like, with consideration given to the processing method or the like.

Metal Mask

The metal mask 10 is composed of a metal, and the slits 15 that extendin the lengthwise direction or the crosswise direction are arranged in aplurality of rows in the position overlapping the openings 25, in otherwords, in the position where all of the openings 25 arranged in theresin mask 20 are visible, when seen from a front of the metal mask 10.Note that in FIGS. 1 and 2, the slits 15 that extend in the lengthwisedirection of the metal mask 10 are continuously arranged in thecrosswise direction. Further, in the present invention, the example inwhich the slits 15 that extend in the lengthwise direction or thecrosswise direction are arranged in a plurality of rows is cited anddescribed, but the slits 15 may be arranged in only a single row in thelengthwise direction or in the crosswise direction.

While a width W of the slit 15 is not specially limited, the width W ispreferably designed to be shorter than at least the pitch between theadjacent openings 25. More specifically, as shown in FIG. 2 (a), whenthe slit 15 extends in the lengthwise direction, the width W in thecrosswise direction of the slit 15 is preferably made shorter than thepitch P1 of the openings 25 adjacent to each other in the crosswisedirection. Similarly, though not illustrated, when the slit 15 extendsin the crosswise direction, a width in the lengthwise direction of theslit 15 is preferably made shorter than a pitch P2 of the openings 25adjacent to each other in the lengthwise direction. Meanwhile, a lengthL in the lengthwise direction in a case of the slit 15 extending in thelengthwise direction is not specially limited, and can be properlydesigned in accordance with the lengthwise length of the metal mask 10and the positions of the openings 25 that are provided in the resin mask20.

Further, the slit 15 that continuously extends in the lengthwisedirection, or in the crosswise direction may be divided into a pluralityof portions by a bridge 18. Note that FIG. 2 (d) is a front view of thevapor deposition mask 100 seen from the metal mask 10 side, and shows anexample in which the single slit 15 continuously extending in thelengthwise direction shown in FIG. 2 (a) are divided into a plurality ofportions (slits 15 a and 15 b) by the bridge 18. While a width of thebridge 18 is not specially limited, the width of the bridge 18 ispreferably around 5 μm to 20 μm. By setting the width of the bridge 18to be within this range, the rigidity of the metal mask 10 can beeffectively enhanced. The arrangement position of the bridge 18 is notspecially limited, but the bridge 18 is preferably arranged in such amanner that the slit after being divided is overlaid on the two or moreof the openings 25.

While a sectional shape of the slit 15 that is formed in the metal mask10 is not specially limited, either, the sectional shape is preferably ashape that has broadening toward the vapor deposition source as shown inFIG. 3, similarly to the opening 25 in the above described resin mask20.

The material of the metal mask 10 is not specially limited, and theconventionally known material in the field of the vapor deposition maskcan be properly selected and used, and, for example, a metal materialsuch as stainless steel, an iron-nickel alloy, and an aluminum alloy canbe cited. Above all, an invar material that is an iron-nickel alloy canbe preferably used since an invar material is hardly deformed by heat.

Further, when the vapor deposition mask 100 at a front side of thesubstrate needs to be attracted by a magnetic force by arranging amagnet or the like at a rear side of the substrate when vapor depositionis performed onto the substrate with use of the vapor deposition mask100 of the present invention, the metal mask 10 is preferably formed ofa magnetic substance. As the metal mask 10 of a magnetic substance, pureiron, carbon steel, W steel, Cr steel, Co steel, KS steel, MK steel, NKSsteel, Cunico steel, an AL-Fe alloy and the like can be cited. Further,when the material itself that forms the metal mask 10 is not of amagnetic substance, magnetism may be given to the metal mask 10 bydispersing powder of the above described magnetic substance into thematerial.

While the thickness of the metal mask 10 is not specially limited, thethickness is preferably around 5 μm to 100 μm. In the case ofconsideration being given to prevention of a shadow at the time of vapordeposition, the thickness of the metal mask 10 is preferably small, butwhen the thickness of the metal mask 10 is made thinner than 5 μm, therisk of breakage and deformation is increased, and handling is likely tobe difficult. However, since in the present invention, the metal mask 10is integrated with the resin mask 20, the risks of breakage anddeformation can be reduced even if the thickness of the metal mask 10 isvery small such as 5 μm, and a metal mask is usable if the thicknessthereof is 5 μm or more. Note that the case in which the thickness ofthe metal mask 10 is made larger than 100 μm is not preferable becausegeneration of a shadow can arise.

Hereinafter, with use of FIG. 8 (a) to FIG. 8 (c), a relation ofgeneration of a shadow, and the thickness of the metal mask 10 will bespecifically described. As shown in FIG. 8 (a), when the thickness ofthe metal mask 10 is small, the vapor deposition material that isreleased toward a vapor deposition target from a vapor deposition sourcepasses through the slit 15 of the metal mask 10 and the opening 25 ofthe resin mask 20 without colliding with an inner wall surface of theslit 15 of the metal mask 10 and a surface of the metal mask 10 at aside where the resin mask 20 is not provided, and reaches the vapordeposition target. Thereby, formation of the vapor deposition patternwith a uniform film thickness onto the vapor deposition target isenabled. Namely, generation of a shadow can be prevented. Meanwhile, asshown in FIG. 8 (b), when the thickness of the metal mask 10 is large,for example, when the thickness of the metal mask 10 is a thicknessexceeding 100 μm, a part of the vapor deposition material that isreleased from the vapor deposition source collides with the inner wallsurfaces of the slit 15 of the metal mask 10, and the surface of themetal mask 10 at the side where the resin mask 20 is not formed, andcannot reach the vapor deposition target. As the vapor depositionmaterial that cannot reach the vapor deposition target increases more,an undeposited portion having a film thickness smaller than the intendedvapor deposition film thickness occurs to the vapor deposition targetmore, namely, a shadow is generated.

In order to prevent generation of a shadow sufficiently, the sectionalshape of the slit 15 is preferably made a shape having broadening towardthe vapor deposition source, as shown in FIG. 8 (c). By adopting thesectional shape like this, the vapor deposition material can be causedto reach the vapor deposition target without the vapor depositionmaterial that is released from the vapor deposition source collidingwith the surface of the slit 15 and the inner wall surface of the slit15 even if the thickness of the entire vapor deposition mask is madelarge with the objective of prevention of distortion that can occur tothe vapor deposition mask 100, or enhancement of durability. Morespecifically, the angle that is formed by a straight line connecting thelower bottom distal end in the slit 15 of the metal mask 10 and theupper bottom distal end in the slit 15 of the same metal mask 10, andthe bottom surface of the metal mask 10 is preferably within a range of25° to 65°. In particular, in this range, an angle that is smaller thanthe vapor deposition angle of the vapor deposition machine to be used ispreferable. By adopting the sectional shape like this, the depositionmaterial can be caused to reach the vapor deposition target without thevapor deposition material released from the vapor deposition sourcecolliding with the inner wall surface of the slit 15 even when thethickness of the metal mask 10 is made relatively large with theobjective of prevention of distortion that can arise in the vapordeposition mask 100, or enhancement of durability. Thereby, generationof a shadow can be prevented more effectively. Note that FIG. 8 is apartial schematic sectional view for explaining the relation ofgeneration of a shadow and the slit 15 of the metal mask 10. Note thatin FIG. 8 (c), the slit 15 of the metal mask 10 has the sectional shapehaving broadening toward the vapor deposition source side, and the endsurfaces that face each other of the opening 25 of the resin mask 20 aresubstantially parallel with each other, but in order to preventgeneration of a shadow more effectively, the sectional shapes of boththe slit of the metal mask 10 and the opening 25 of the resin mask 20are preferably the shapes having broadening toward the vapor depositionsource side.

FIG. 5 is a front view showing another mode of the vapor deposition mask100 of the present invention.

As shown in FIG. 5, in the front view of the vapor deposition mask 100seen from the metal mask 10 side, the openings 25 that are formed in theresin mask 20 visible from the slits 15 of the metal mask may bearranged in a staggered configuration in the crosswise direction.Namely, the openings 25 that are adjacent with each other in thecrosswise direction may be arranged by being displaced from each otherin the lengthwise direction. By arranging the openings 25 as above, evenwhen the resin mask 20 is thermally expanded, expansion that occurs ineach site can be absorbed by the openings 25, and generation of largedeformation due to accumulation of expansion can be prevented.

Further, as shown in FIG. 5, the opening 25 that is formed in the resinmask 20 does not have to correspond to one pixel, and two pixels to tenpixels may be collected to be a single opening 25, for example.

FIGS. 9 (a) to (d) are partial schematic sectional views showing therelation of the slit of the metal mask and the opening of the resinmask, and in the forms that are illustrated, the sectional shapes ofentire openings that are formed by the slits 15 of the metal masks andthe openings 25 of the resin masks show step shapes. As shown in FIG. 9,the sectional shapes of the entire openings are formed into step shapeshaving broadening toward the vapor deposition source sides, wherebygeneration of a shadow can be prevented effectively. In the sectionalshapes of the slit 15 of the metal mask and the resin mask 20, the endsurfaces that face each other may be substantially parallel with eachother as shown in FIG. 9 (a), but as shown in FIGS. 9 (b) and (c), onlyany one of the slit 15 of the metal mask and the opening of the resinmask may have a sectional shape having broadening toward the vapordeposition source side. Note that as described in the above, in order toprevent generation of a shadow more effectively, both of the slit 15 ofthe metal mask, and the opening 25 of the resin mask preferably have thesectional shapes having broadening toward the vapor deposition sourceside as shown in FIG. 3 and FIG. 9 (d).

A width of a flat portion (reference sign (X) in FIG. 9) in the sectionformed into the above described step shape is not specially limited, butwhen the width of the flat portion (X) is less than 1 μm, the effect ofprevention of shadow generation tends to reduce due to interference ofthe slit of the metal mask. Accordingly, with this point taken intoconsideration, the width of the flat portion (X) is preferably 1 μm ormore. A preferable upper limit value is not specially limited, and canbe properly set with consideration given to the size of the opening ofthe resin mask, the space between the adjacent openings and the like,and as one example, the preferable upper limit value is approximately 20μm.

Note that FIGS. 9 (a) to (d) described above each shows an example inwhich the single opening 25 that overlaps the slit 15 is provided in thecrosswise direction when the slit extends in the lengthwise direction,but as shown in FIG. 10, two or more of the openings 25 that overlap theslit 15 may be provided in the crosswise direction when the slit extendsin the lengthwise direction. In FIG. 10, both the slit 15 of the metalmask and the opening 25 of the resin mask have sectional shapes havingbroadening toward the vapor deposition source side, and two or more ofthe openings 25 that overlap the slit 15 are provided in the crosswisedirection.

Method for Producing Vapor Deposition Mask

Next, a method for producing a vapor deposition mask device of thepresent invention will be described.

First Production Method

FIG. 6 is a process chart for describing a first production method. Notethat (a) to (f) are all sectional views.

The first production method includes a step of bonding a metal maskprovided with slits and a resin mask to each other, a step of fixing themetal mask to which the resin plate is bonded onto a frame containing ametal, and a step of forming openings corresponding to a pattern to beproduced by vapor deposition in a plurality of rows lengthwise andcrosswise in the resin plate by emitting laser from the metal mask side.The respective steps will be described hereinafter.

Step of Bonding Metal Mask Provided with Slits and Resin Plate

First, a metal mask provided with slits is prepared. In the presentmethod, a method for producing the metal mask that is prepared is notspecially limited, and a method that can form desired slits with highprecision can be properly selected.

For example, as shown in FIG. 6 (a), the metal plate 61 is prepared, andboth surfaces thereof are coated with a resist material 62. As theresist material for use, the resist material with high treatability andwith desired resolution is used. Thereafter, the resist material 62 ismasked with a mask 63 in which a slit pattern is formed, and is exposedby contact exposure, and is developed. Thereby, as shown in FIG. 6 (b),resist patterns 64 are formed on both the surfaces of the metal plate61. Next, with use the resist patterns as etching resistant masks,etching processing is performed by a two-stage etching method. Note thatthe two-stage etching method refers to a processing method of formingthrough-holes by forming resist patterns on both surfaces of a metalplate, etching from one surface side is performed, thereafter, fillingan etching resistant resin, a so-called backing material is filled inrecessed portions that are formed and are not penetrated, and thereafterperforming etching from the other surface side. In the present method,instead of a two-stage etching, a method that performs etchingsimultaneously from both surfaces may be adopted, but from the viewpointof processing precision, a two-stage etching method is preferably used.When etching is finished, the resist patterns are cleaned and removed.Thereby, as shown in FIG. 6 (c), desired slits 65 are formed in themetal plate 61, and a metal mask 66 is obtained.

As shown in FIG. 6 (d), the metal mask 66 and a resin plate 67 arebonded to each other. A method thereof is not specially limited, andvarious tackiness agents may be used, or a resin plate havingself-adhesiveness may be used, for example. Note that sizes of the metalmask 66 and the resin plate 67 may be the same, but with considerationgiven to fixation to the frame that is optionally performed thereafter,it is preferable to make the size of the resin plate 67 smaller thanthat of the metal mask 66, and keep an outer peripheral portion of themetal mask 66 in an exposed state.

Step of Fixing Metal Mask to which Aforementioned Resin Plate is Bonded,to Frame Containing Metal

Next, as shown in FIG. 6 (e), to a frame 68 containing a metal, themetal mask 66 to which the resin plate 67 is bonded is fixed. In thepresent method, a fixing method is not limited, and, for example, aconventionally known step and method such as spot welding can beproperly adopted.

Step of Forming Openings Corresponding to Pattern to be Produced byVapor Deposition in a Plurality of Rows Lengthwise and Crosswise inAforementioned Resin Plate by Emitting Laser from Metal Mask Side

Next, openings 69 corresponding to a pattern to be produced by vapordeposition are formed in a plurality of rows lengthwise and crosswise inthe aforementioned resin plate 67 by emitting laser through the slits 65from the metal mask 66 side, and a resin mask 70 is made. The laserapparatus that is used here is not specially limited, and aconventionally known laser apparatus can be used. Thereby, a vapordeposition mask device 80 of the present invention as shown in FIG. 6(f) is obtained.

Second Production Method

FIG. 7 is a process chart for describing a second production method.Note that (a) to (f) are all sectional views.

The second production method includes a step of fixing a metal maskprovided with slits onto a frame containing a metal, a step of bondingthe metal mask fixed to the frame and a resin plate to each other, and astep of forming openings corresponding to a pattern to be produced byvapor deposition in a plurality of rows lengthwise and crosswise in theaforementioned resin plate by emitting laser from the aforementionedmetal mask side. Namely, in the first production method described in theabove, the metal mask 66 and the resin plate 67 are bonded to eachother, and thereafter, the metal mask 66 is fixed by means of the frame68, whereas in the second production method, the metal mask 66 is fixedto the frame 68 first, and thereafter, the resin plate 67 is bonded.

Namely, in the second production method, the step of producing the metalmask 66 is the same as that in the aforementioned first productionmethod as shown in FIGS. 7 (a) to (c), and after the completed metalmask 66 is fixed to the frame 68 containing a metal as shown in FIG. 7(d), the metal mask 66 and the resin plate 67 are bonded to each otheras shown in FIG. 7 (e). Thereafter, the step of providing the openings65 in the resin plate 67 to make the vapor deposition mask device 80 isthe same as in the aforementioned first production method as shown inFIG. 7 (f).

As above, according to the first and second production methods, in eachof the production methods, the completed vapor deposition mask is notfixed to the frame, but the openings are provided later for the resinplate in the state fixed to the frame, and therefore, positionalprecision can be drastically enhanced. Note that in the conventionallyknown method, the metal mask in which the openings are set are fixed tothe frame while being pulled, and therefore, precision of positioncoordinates of the openings is reduced.

Further, when providing the openings 25 to the resin plate in the statefixed to the frame, a reference sheet that is provided in advance with apattern corresponding to the openings 25 to be formed may be prepared,and in a state in which the reference sheet is bonded to a surface ofthe resin plate at a side where the metal mask 66 is not provided, laserirradiation corresponding to the pattern on the reference sheet may beperformed from the metal mask 10 side. According to the method, theopenings 25 can be formed in a so-called face-to-face state in whichlaser irradiation is performed while the pattern on the reference sheetbonded to the resin plate is being watched, and the resin mask 20 havingthe openings 25 with high definition that have extremely highdimensional precision of the openings can be formed. Further, in thismethod, formation of the openings 25 is performed in the state fixed tothe frame, the vapor deposition mask that is excellent in not onlydimensional precision but also positional precision can be provided.

Note that in the case of using the above described method, it isnecessary to be able to recognize the pattern on the reference sheetwith a laser irradiator or the like through the resin plate from themetal mask 66 side. As the resin plate, use of the resin film materialhaving transparency is necessary when the material has a certain degreeof thickness, but when the resin film material has a preferablethickness with the influence on a shadow taken into consideration asdescribed above, for example, a thickness of approximately 3 μm to 25μm, the pattern on the reference sheet can be recognized even if theresin plate is colored.

A method for bonding the resin plate and the reference sheet is notspecially limited, and when the metal mask 66 is a magnetic body, forexample, a magnet or the like is arranged at a rear side of thereference sheet, and the resin plate and the reference sheet are bondedto each other by being attracted. Besides this, the resin film 200 andthe reference sheet also can be bonded to each other with use of anelectrostatic adsorbing method or the like. As the reference sheet, aTFT substrate having a predetermined opening pattern, a photo mask andthe like can be cited, for example.

Slimming Step

Further, in the production method of the present invention, a slimmingstep may be performed between the steps described above, or after thesteps. The step is an optional step in the production method of thepresent invention, and is the step of optimizing the thickness of themetal mask 66, and the thickness of the resin mask 70. The preferablethicknesses of the metal mask 66 and the resin mask 70 may be properlyset in the above described ranges, and the detailed explanation herewill be omitted.

For example, when the resin plate and the metal plate that are thickerthan the preferable thicknesses described above are used as the resinplate 67 to be the resin mask 70, and the metal plate 61 to be the metalmask 66, excellent durability and transportability can be given when themetal plate 61 and the resin plate 67 are individually transported, whena layered body in which the resin plate 67 is provided on the metalplate 61 which is provided with recessed portions is transported, orwhen the vapor deposition mask 100 obtained in the above described stepof forming the vapor deposition mask is transported, during theproduction process. Meanwhile, in order to prevent generation of ashadow or the like, the thicknesses of the vapor deposition mask 100that is obtained according to the production method of the presentinvention is preferably the optimum thicknesses. The slimming step is auseful step in the case of optimizing the thickness of the vapordeposition mask 100 while satisfying durability and transportabilityduring the production process or after the process.

Slimming of the metal plate 61 to be the metal mask 66 and the metalmask 66, namely, optimization of the thickness of the metal mask can berealized by etching the surface of the metal plate 61 at the side thatis not in contact with the resin plate 67, or the surface of the metalmask 66 at the side that is not in contact with the resin plate 67 orthe resin mask 20 by using the etching agent capable of etching themetal plate 61 and the metal mask 66, between the steps described above,or after the steps.

Slimming of the resin plate 67 to be the resin mask 70 and the resinmask 70, namely, optimization of the thicknesses of the resin plate 67and the resin mask 70 is similar to the above, and can be realized byetching the surface of the resin plate 67 at the side that is not incontact with the metal plate 61 and the metal mask 66, or the surface ofthe resin mask 70 at the side that is not in contact with the metal mask66 by using the etching agent capable of etching the materials of theresin plate 67 and the resin mask 70. Further, after the vapordeposition mask 100 is formed, both the metal mask 66 and the resin mask70 are subjected to etching processing, whereby the thicknesses of bothof them also can be optimized between the steps described above, orafter the steps.

Method for Producing Organic Semiconductor Element

A method for producing an organic semiconductor element of the presentinvention is characterized by forming an organic semiconductor elementby using the vapor deposition mask 100 of the present inventiondescribed in the above. As for the vapor deposition mask 100, the vapordeposition mask 100 of the present invention described above can bedirectly used, and therefore, the detailed explanation here will beomitted. According to the vapor deposition mask of the present inventiondescribed above, an organic semiconductor element having a pattern withhigh definition can be formed by the openings 25 with high dimensionalprecision which are included by the vapor deposition mask 100. As theorganic semiconductor element that is produced according to theproduction method of the present invention, an organic layer of anorganic EL element, a light emitting layer, a cathode electrode and thelike, for example, can be cited. In particular, the method for producingthe organic semiconductor element of the present invention can befavorably used in production of the R, G and B light emitting layers ofthe organic EL element which are required to have pattern precision withhigh definition.

REFERENCE SIGNS LIST

-   100 Vapor deposition mask-   10, 66 Metal mask-   15 Slit-   18 Bridge-   20, 70 Resin mask-   25 Opening-   80 Vapor deposition mask device

The invention claimed is:
 1. A method of producing an organicsemiconductor element by vapor deposition, comprising the steps of:arranging a vapor deposition target, a vapor deposition mask equipmentand a vapor deposition source in this order; and forming an organicsemiconductor element by using the vapor deposition mask equipment,wherein the deposition mask equipment comprises a vapor deposition maskincluding a resin mask, and a frame for fixing the vapor depositionmask, wherein the resin mask has openings formed by emitting a laserafter the resin mask is fixed to the frame, and wherein the openingscorrespond to a pattern to be produced by vapor deposition.
 2. Themethod of producing an organic semiconductor element according to claim1, wherein the organic semiconductor element is an organic luminescencelayer and the pattern is a high-definition pattern exceeding 300 ppi. 3.The method of producing an organic semiconductor element according toclaim 1, wherein the openings are formed by performing laser irradiationthat adjusts an irradiation position of the laser.
 4. The method ofproducing an organic semiconductor element according to claim 1, whereinthe resin mask is made of a resin material having a thermal expansioncoefficient of 16 ppm/° C. or less.
 5. The method of producing anorganic semiconductor element according to claim 1, wherein the resinmask has a rate of humidity absorption of 1.0% or less.
 6. The method ofproducing an organic semiconductor element according to claim 1, whereina cross-sectional shape of the openings broadens towards a vapordeposition source direction.